Product Summary

The BSM200GB120DN2B is an IGBT Power module.

Parametrics

BSM200GB120DN2B absolute maximum ratings: (1)Collector-emitter voltage : 1200 V; (2)Gate-emitter voltage : ± 20V; (3)DC collector current : 200A; (4)Pulsed collector current, tp = 1 ms : 400A; (5)Power dissipation per IGBT : 1400W; (6)Chip temperature : 150℃; (7)Storage temperature : -55 to + 150℃.

Features

BSM200GB120DN2B features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM200GB120DN2B dimension

BSM200GA120D
BSM200GA120D
Other

Data Sheet
Negotiable 
BSM200GA120DLC
BSM200GA120DLC
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DLCS
BSM200GA120DLCS
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DN2
BSM200GA120DN2
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-1: $71.06
1-10: $63.95
BSM200GA120DN2C
BSM200GA120DN2C
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2F
BSM200GA120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40