Product Summary

The 7MBR50SB120 is an IGBT Power module.

Parametrics

7MBR50SB120 absolute maximum ratings: (1)Collector-emitter voltage : 1200 V; (2)Gate-emitter voltage : ± 20V; (3)DC collector current : 75A; (4)Pulsed collector current, tp = 1 ms : 150A; (5)Power dissipation per IGBT : 520W; (6)Chip temperature : 150℃; (7)Storage temperature : -55 to + 150℃.

Features

7MBR50SB120 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

7MBR50SB120 dimension

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