Product Summary
The 1PS59SB10 is a Schottky barrier (double) diode. Its applications include ultra high-speed switching, voltage clamping, protection circuits.
Parametrics
1PS59SB10 absolute maximum ratings: (1)VR, continuous reverse voltage: 30V; (2)IF, continuous forward current: 200mA; (3)IFRM, repetitive peak forward current: 300mA; (4)IFSM, non-repetitive peak forward current: 600mA; (5)Ptot, total power dissipation: 250mW; (6)Tstg, storage temperature: -65 to 150℃; (7)Tj, junction temperature: 125℃.
Features
1PS59SB10 features: (1)Low forward voltage; (2)Guard ring protected; (3)Small SMD package.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() 1PS59SB10 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 1PS59SB10 T/R |
![]() NXP Semiconductors |
![]() Schottky (Diodes & Rectifiers) DIODE SCHOTTKY TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
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![]() 1PS59SB10,115 |
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![]() DIODE SCHOTTKY 30V 300MA SC59 |
![]() Data Sheet |
![]() Negotiable |
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