(China (Mainland))
Product Summary
The S29GL01GP11TFIR1 is a Flash Memory.
Parametrics
S29GL01GP11TFIR1 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: –0.5 V to VCC + 0.5 V; (4)Output Short Circuit Current (Note 3): 200 mA.
Features
S29GL01GP11TFIR1 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)90 nm MirrorBit process technology; (3)8-word/16-byte page read buffer; (4)32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (5)100,000 erase cycles per sector typical; (6)20-year data retention typical; (7)Suspend and Resume commands for Program and Erase operations; (8)Write operation status bits indicate program and erase operation completion; (9)Unlock Bypass Program command to reduce programming time; (10)Support for CFI (Common Flash Interface); (11)Persistent and Password methods of Advanced Sector Protection; (12)Hardware reset input (RESET#) resets device; (13)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 S29GL01GP11TFIR10 |
Spansion |
Flash 3V 1 Gb Mirrorbit highest address110ns |
Data Sheet |
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S29GL01GP11TFIR13 |
Spansion |
Flash IC 1GIG 3.0V FLASH MEMORY |
Data Sheet |
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