(China (Mainland))
Product Summary
The NDT3055 is an N-channel enhancement mode field effect transistor.
Parametrics
NDT3055 absolute maximum ratings: (1)VDSS, Drain-source voltage: 60V; (2)VGSS, gate-source voltage-continuous: ±20V; (3)ID, Maximum drain current, continuous: 4A; pulsed: 25A; (4)PD, maximum power dissipation: 3W; (5)TJ, TSTG, Operating and storage temperature range: -65 to 150℃.
Features
NDT3055 features: (1)4A, 60V. RDS(ON)=0.100Ω @ VGS=10V; (2)High density cell design for extrmemly low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NDT3055 |
Fairchild Semiconductor |
MOSFET SOT-223 N-CH ENHANCE |
Data Sheet |
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NDT3055_J23Z |
Fairchild Semiconductor |
MOSFET N-Channel FET Enhancement Mode |
Data Sheet |
Negotiable |
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NDT3055L |
Fairchild Semiconductor |
MOSFET SOT-223 N-CH LOGIC |
Data Sheet |
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NDT3055L_Q |
Fairchild Semiconductor |
MOSFET SOT-223 N-CH LOGIC |
Data Sheet |
Negotiable |
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